GaN on SiC HEMT Power Transistor MAGX-001090-600L00

MAGX-001090-600L00 he MAGX-001090-600L00 is a gold-metalized matched GaN on Silicon Carbide RF power transistor optimized for pulsed avionics and radar applications. The MAGX-001090-600L00 provides 600 W of output power with 21.4 dB of gain and 63% efficiency. The device also boasts very high breakdown voltages, which allows for reliable and stable operation at more extreme load mismatch conditions. The part is a clear leader with 5:1 Load Mismatch Tolerance and also offers the lowest pulse droop in its class. Datasheet: http://cdn.macom.com/datasheets/MAGX-001090-600L00.pdf Application Notes: http://cdn.macom.com/applicationnotes/AN211a.pdf http://cdn.macom.com/applicationnotes/AN215a.pdf http://cdn.macom.com/applicationnotes/AN4002.pdf http://cdn.macom.com/applicationnotes/AN721.pdf

  PRZEJDŹ NA FORUM