Tranzystor 500W, 800 – 1600MHz, GaN HEMT CGHV14500

Cree’s CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 0.8 – 1.6-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package. http://www.cree.com/RF/Products/SBand-XBand-CBand/Packaged-Discrete-Transistors/CGHV14500

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