125 W GaN HEMT Covers 1 to 2700 MHz MMRF5014H

The significant advantages of gallium nitride (GaN) have mostly been discussed in relation to delivering high peak power in narrowband pulsed applications, primarily active electronically scanned array (AESA) radar. http://cache.freescale.com/files/rf_if/doc/support_info/MMRF5014H_50V_GaN_TRN_SI.pdf http://www.microwavejournal.com/articles/23818

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