100W, DC to 3.5 GHz, GaN RF Power Transistor TGF2929-FL

The TGF2929-FL from Qorvo is a ceramic GaN on SiC HEMT Transistor that operates from DC to 3.5 GHz. It is ideal for military and civilian radars, radio communications, test instrumentation and jammer applications. Operating at 28 V it provides 107 W of power (P3dB) with a gain of more than 14 dB at 3.5 GHz. http://cdn.everythingrf.com/live/659_483_tgf2929_fl_TGF2929-FL.pdf

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