Cree delivers two new unmatched 50 V GaN HEMTs for high power broadband amplifier CGHV40030, CGHV40100

Cree delivers two new unmatched 50 V GaN HEMTs for high power broadband amplifier, CW, and pulsed applications. Exhibiting high efficiency, high gain, and wide bandwidth capabilities, plus high power density, low parasitics, and high current gain cutoff frequency (FT), the new 30 W CGHV40030 and 100 W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave bandwidth amplifiers and a wide range of L- and S-Band products. The 30 W GaN transistor provides 65% efficiency in broadband applications. The CGHV40100 transistor is especially well suited for linear and compressed amplifier circuits. Both the 30 W and 100 W 50 V GaN transistors are available in a two-leaded flange or pill package. 30 W CGHV40030 http://www.cree.com/RF/Products/General-Purpose-Broadband-50-V/Packaged-Discrete-Transistors/CGHV40030 100 W CGHV40100 http://www.cree.com/RF/Products/General-Purpose-Broadband-50-V/Packaged-Discrete-Transistors/CGHV40100

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