| 150 Watt GaN HEMT for LTE Applications (2,3GHz) CGHV27150MP |
The CGHV27150MP is a gallium nitride (GaN) HEMT designed specifically for high efficiency, high gain applications from 2.3 to 2.7 GHz. It provides an output power of 150 Watts, gain of 16 dB, and has an efficiency of 34%. This GaN HEMT device is ideal for LTE, 4G Telecom and BWA amplifier applications. http://cdn.everythingrf.com/live/659_205_cghv27150mp_CGHV27150MP.pdf |
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