50 Watt GaN HEMT from DC to 4 GHz
CGHV40050
The CGHV40050 is a GaN HEMT from Cree that provides a saturated output power of up to 77 Watts, has a small signal gain of 17.5 dB and efficiency of up to 60%. The transistor requires a 50 V supply. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz.



http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV40050.pdf



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