Two GaN Power Amplifiers: F514 / F501 Sumitomo Electric Device Innovations

Sumitomo Electric has added two GaN power amplifiers for X-Band radar applications. The F514 has a typical saturated output power of 350 W (>55 dBm) with 40 percent power-added efficiency and 10 dB power gain across 9.2 to 10.1 GHz. The F501 is a compact, surface-mount, hybrid module that can be used as the power amplifier (PA) in a phased array radar or as the driver for a higher power PA. http://www.microwavejournal.com/articles/28788-two-gan-power-amplifiers-f514-f501 http://www.sei-device.com/

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