Grupa: Administrator 
Lokalizacja: Bydgoszcz JO83XC
Posty: 7669 #2053035
Od: 2011-6-25
| Cree delivers two new unmatched 50 V GaN HEMTs for high power broadband amplifier, CW, and pulsed applications.
Exhibiting high efficiency, high gain, and wide bandwidth capabilities, plus high power density, low parasitics, and high current gain cutoff frequency (FT), the new 30 W CGHV40030 and 100 W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave bandwidth amplifiers and a wide range of L- and S-Band products.
The 30 W GaN transistor provides 65% efficiency in broadband applications. The CGHV40100 transistor is especially well suited for linear and compressed amplifier circuits. Both the 30 W and 100 W 50 V GaN transistors are available in a two-leaded flange or pill package.
30 W CGHV40030
TYLKO ZAREJESTROWANI I ZALOGOWANI UŻYTKOWNICY WIDZĄ LINKI » DARMOWA REJESTRACJA
100 W CGHV40100
TYLKO ZAREJESTROWANI I ZALOGOWANI UŻYTKOWNICY WIDZĄ LINKI » DARMOWA REJESTRACJA
_________________
73! Maciej |
